报告题目：High-powerSchottky barrier diamond diodes made from HPHT grown single crystal boron-dopeddiamond substrate and CVD-grown active homoepitaxial diamond layers

报告人：Prof. Sergey G.Buga

Moscow Institute of Physics andTechnology

Abstract:Wedesigned and made thin (15 μm) high power large area vertical Schottky barriersingle crystal diamond diodes using two-stage homoepitaxial CVD-growth ofactive semiconductor layer on a high-quality heavily boron-doped HPHT diamondsubstrate. The ion-beam assisted lift-off technique was used to separate 5 × 5mm²active two-layered structure from the ballast HPHT diamondsubstrate. The fabricated diodes have 6 mΩ∗cm²(0.03 Ω) on-resistance at roomtemperature and 3 mΩ∗cm²(0.015 Ω) at 200 °C fixed temperature of the diode case. Diodes have beentested up to 20 A forward current and reverse voltage up to 300 V.

报告时间：2019年3月21日（周四）上午8:30

报告地点：前卫南区唐敖庆楼C区603报告厅

举办单位：超硬材料国家重点实验室

物理学院

尊龙凯时省物理学会

中国物理学会高压物理专业委员会